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PBSS4112PANP,115 Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor

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PBSS4112PANP,115 Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor

Model Number : PBSS4112PAN

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7900pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor Array NPN, PNP 120V 1A 120MHz 510mW Surface Mount 6-HUSON (2x2)

collector-base voltage : 120 V

collector-emitter voltage : 120 V

emitter-base voltage : 7 V

collector current : 1 A

peak collector current : 1.5 A

base current : 0.3 A

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PBSS4112PAN

120 V, 1 A NPN/NPN low VCEsat (BISS) transistor

General description

NPN/NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.

Features and benefits

• Very low collector-emitter saturation voltage V_CEsat

• High collector current capability I_C and I_CM

• High collector current gain h_FE at high I_C

• Reduced Printed-Circuit Board (PCB) requirements

• High energy efficiency due to less heat generation

• AEC-Q101 qualified

Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
Per transistor
V_CBO	collector-base voltage	open emitter		-	120	V
V_CEO	collector-emitter voltage	open base		-	120	V
V_EBO	emitter-base voltage	open collector		-	7	V
I_C	collector current			-	1	A
I_CM	peak collector current	single pulse; t_p ≤ 1 ms		-	1.5	A
I_B	base current			-	0.3	A
I_BM	peak base current	single pulse; t_p ≤ 1 ms		-	1	A
P_tot	total power dissipation	Tamb ≤ 25 °C	[1] [2] [3] [4] [5] [6] [7] [8]	- - - - - - - -	370 570 530 700 450 760 700 1450	mW mW mW mW mW mW mW mW
Per device
P_tot	total power dissipation	Tamb ≤ 25 °C	[1] [2] [3] [4] [5] [6] [7] [8]	- - - - - - - -	510 780 730 960 620 1040 960 2000	mW mW mW mW mW mW mW mW
Tj	junction temperature			-	150	°C
Tamb	ambient temperature			-55	150	°C
Tstg	storage temperature			-65	150	°C

[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.

[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.

[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.

[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

Stock Offer (Hot Sell)

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SP708SEN	8240	SIPEX	16+	SOP-8
SM7523B	47500	SM	16+	SOP-8
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SST25VF016B-50-4I-S2AF	12564	SST	14+	SOP-8
SST25VF020-20-4I-SAE	8532	SST	11+	SOP-8
SST25VF032B-80-4I-S2AF	10142	SST	16+	SOP-8
SST25VF080B-50-4C-S2AF	19348	SST	10+	SOP-8
SST25VF080B-80-4I-S2AF	12578	SST	16+	SOP-8
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ST922I	40276	ST	16+	SOP-8
STM704SM6F	6004	ST	16+	SOP-8
STS8DNF3LL	14592	ST	04+	SOP-8
STS8DNH3LL	17320	ST	10+	SOP-8
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Product Tags:

multi emitter transistor

silicon power transistors

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