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Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A

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Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A

Brand Name : TI

Model Number : CSD19533Q5A

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Description : N-Channel 100 V 100A (Ta) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSONP (5x6)

Drain-to-Source Voltage : 100 V

Gate Charge Total (10 V) : 27 nC

Gate Charge Gate to Drain : 4.9 nC

Drain-to-Source On Resistance : 8.7 mΩ

Threshold Voltage : 2.8 V

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FEATURES

• Ultra-Low Qg and Qgd

• Low Thermal Resistance

• Avalanche Rated

• Pb-Free Terminal Plating

• RoHS Compliant

• Halogen Free

• SON 5-mm × 6-mm Plastic Package

APPLICATIONS

• Primary Side Telecom

• Secondary Side Synchronous Rectifier

• Motor Control

DESCRIPTION

This 100 V, 7.8 mΩ, SON 5 mm x 6 mm NexFET™

power MOSFET is designed to minimize losses in

power conversion applications.

Q5A Tape and Reel Information

Notes:

1. 10-sprocket hole-pitch cumulative tolerance ±0.2

2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm

3. Material: black static-dissipative polystyrene

4. All dimensions are in mm (unless otherwise specified)

5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket

Product Tags:

power mosfet ic

silicon power transistors

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