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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 ,

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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 ,

Model Number : 2SB1560

Certification : new & original

Place of Origin : original factory

MOQ : 20

Price : Negotiation

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8000

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor PNP - DarliCM GROUPon 150 V 10 A 50MHz 100 W Through Hole TO-3P

Package : TO-3PN

Applications : Audio ,regulator and general purpose

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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 ,

DarliCM GROUPon 2SB1560

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)

**PINNING**
PIN	DESCRIPTION
1	Base
2	Collector;connected to mounting base
3	Emitter

**Absolute maximum ratings(Ta=℃)**
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	Open emitter	-160	V
V_CEO	Collector-emitter voltage	Open base	-150	V
V_EBO	Emitter-base voltage	Open collector	-5	V
I_C	Collector current		-10	A
I_B	Base current		1	A
P_C	Collector power dissipation	T_C=25℃	100	W
T_j	Junction temperature		150	℃
T_stg	Storage temperature		-55~150	℃

**CHARACTERISTICS Tj=25℃** (unless otherwise specified)
SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=-30mA ;I_B=0	-150			V
V_CEsat	Collector-emitter saturation voltage	I_C=-7A ;I_B=-7mA			-2.5	V
V_BEsat	Base-emitter saturation voltage	I_C=-7A ;I_B=-7mA			-3.0	V
I_CBO	Collector cut-off current	V_CB=-160V; I_E=0			-100	μA
I_EBO	Emitter cut-off current	V_EB=-5V; I_C=0			-100	μA
h_FE	DC current gain	I_C=-7A ; V_CE=-4V	5000
C_ob	Output capacitance	I_E=0 ; V_CB=10V;f=1MHz		230		pF
f_T	Transition frequency	I_C=-2A ; V_CE=-12V		50		MHz
Switching times
t_on	Turn-on time	I_C=-7A;R_L=10Ω I_B1=- I_B2=-7mA V_CC=-70V		0.8		μs
t_s	Storage time			3.0		μs
t_f	Fall time			1.2		μs

** hFE Classifications**
O	P	Y
5000-12000	6500-20000	15000-30000

PACKAGE OUTLINE

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npn smd transistor

multi emitter transistor

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